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  3. 光電與材料科技學系
Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/21845
Title: Suppressing intermolecular interactions for enhancing the performance of exciplex-based OLEDs
Authors: Hu, Yuan-Cheng
Chen, Li-Ming
Lin, Zong-Liang
Lee, Jhih-Wei
Wei, Wei-Chih
Ko, Tzu-Yu
Lo, Chun-Yuan
Hung, Wen-Yi 
Wong, Ken-Tsung
Keywords: deep-red fluorescence emitter;diphenylphosphine oxide;exciplex;organic light-emitting diode;thermally-activated delayed fluorescence;triazatruxene
Issue Date: 10-May-2022
Publisher: WILEY-V C H VERLAG GMBH
Source: JOURNAL OF THE CHINESE CHEMICAL SOCIETY
Abstract: 
In this study, a new triazatruxene-based donor Tr-iBu bearing branched alkyl groups is reported to suppress the aggregation found in a previously reported methyl-substituted counterpart Tr-Me. The effects of a steric factor on the propensity of exciplex formation were examined by respectively mixing these triazatruxene-based donors with PO-T2T and two new acceptors PO-T2P and PO-Pyr, all bearing phosphine oxide as the peripheral groups and N-heteroarene cores with different numbers of nitrogen. Based on the steric hindrance of side groups and their corresponding molecular orbitals alignments of donors and acceptors, the characteristics of exciplex-forming systems were analyzed. Among them, the exciplex-forming blends Tr-iBu:PO-T2P and Tr-iBu:PO-Pyr were selected to serve as the emitting layer (EML) to achieve OLED devices with a moderate maximum external quantum efficiency (EQE(max)) of 8.27 and 7.54%, respectively. Adopting the Forster resonance energy transfer strategy, the exciplex cohost was doped with a fluorescence emitter, DPy2CN, to realize a deep-red OLED device with the emission peak centered at 674 nm while retaining EQE(max) of 6.28%. Our results highlight the importance of suppressing the donor aggregation, adequate donor: acceptor combination, and a suitable triplet state of composing the materials for giving efficient exciplex-based OLEDs.
URI: http://scholars.ntou.edu.tw/handle/123456789/21845
ISSN: 0009-4536
DOI: 10.1002/jccs.202200094
Appears in Collections:光電與材料科技學系

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