http://scholars.ntou.edu.tw/handle/123456789/22341
Title: | Heterojunction bipolar transistors with a planar-type extended base as a hydrogen-sensitive sensor | Authors: | Huang, Chia-Hua Tan, Shih-Wei Lo, Hao Lo, Chieh Lour, Wen-Shiung |
Keywords: | PD;MIXTURE | Issue Date: | Sep-2022 | Publisher: | WILEY | Source: | ELECTRON LETT | Abstract: | A hydrogen sensing transistor fabricated by a heterojunction bipolar transistor (HBT) with an extended base (EB) formed by a metal-semiconductor-metal (MSM) hydrogen sensor is reported. The power consumption in stand-by mode is smaller than 2 mu W. Common-emitter characteristics show that the sensing base (collector) current gains at 25 degrees C in 0.01%, 0.1%, and 1% H-2/N-2 are as high as 75 (512), 134, (977), and 233 (2.89 x 10(3)), respectively. Low-power consumption and high-sensitive gains are indicative that our HBT together with planar-type MSM sensor is very promising for applications to hydrogen sensing transistors using one voltage source. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/22341 | ISSN: | 0013-5194 | DOI: | 10.1049/ell2.12614 |
Appears in Collections: | 12 RESPONSIBLE CONSUMPTION & PRODUCTION 電機工程學系 |
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