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  2. 電機資訊學院
  3. 光電與材料科技學系
Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/22989
Title: Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt
Authors: JH He
PH Chang
Cheng-Ying Chen 
KT Tsai
Issue Date: Apr-2009
Publisher: IOP Publishing
Journal Volume: 20
Journal Issue: 13
Start page/Pages: 135701
Source: NANOTECHNOLOGY
Abstract: 
We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 × 10−5 Ω cm2. The resistivity of the ZnO NWs is measured to be 2.2 × 10−2 Ω cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as ∼108 have been fabricated and characterized.
URI: http://scholars.ntou.edu.tw/handle/123456789/22989
ISSN: 0957-4484
DOI: 10.1088/0957-4484/20/13/135701
Appears in Collections:光電與材料科技學系

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