Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

Abstract

We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 × 10−5 Ω cm2. The resistivity of the ZnO NWs is measured to be 2.2 × 10−2 Ω cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as ∼108 have been fabricated and characterized.