http://scholars.ntou.edu.tw/handle/123456789/22996| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Yen-De Chiang | en_US |
| dc.contributor.author | Wen-Yuan Chang | en_US |
| dc.contributor.author | Ching-Yuan Ho | en_US |
| dc.contributor.author | Cheng-Ying Chen | en_US |
| dc.contributor.author | Chih-Hsiang Ho | en_US |
| dc.contributor.author | Su-Jien Lin | en_US |
| dc.contributor.author | Tai-Bor Wu | en_US |
| dc.contributor.author | Hau He | en_US |
| dc.date.accessioned | 2022-11-07T03:43:55Z | - |
| dc.date.available | 2022-11-07T03:43:55Z | - |
| dc.date.issued | 2011-06 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/22996 | - |
| dc.description.abstract | Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 10 5 . The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | IEEE | en_US |
| dc.relation.ispartof | Electron Devices, IEEE Transactions on | en_US |
| dc.subject | OHMIC CONTACTS | en_US |
| dc.subject | HIGH-SPEED | en_US |
| dc.subject | NONVOLATILE | en_US |
| dc.subject | RESISTANCE | en_US |
| dc.title | Single-ZnO-Nanowire Memory | en_US |
| dc.type | journal article | en_US |
| dc.identifier.doi | 10.1109/TED.2011.2121914 | - |
| dc.identifier.isi | 000290995400021 | - |
| dc.relation.journalvolume | 58 | en_US |
| dc.relation.journalissue | 6 | en_US |
| dc.relation.pages | 1735-1740 | en_US |
| dc.identifier.eissn | 1557-9646 | en_US |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.cerifentitytype | Publications | - |
| item.languageiso639-1 | en_US | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| item.openairetype | journal article | - |
| crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
| crisitem.author.dept | College of Engineering | - |
| crisitem.author.dept | Department of Optoelectronics and Materials Technology | - |
| crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| 顯示於： | 光電與材料科技學系 | |
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