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Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/23055
Title: Characterization of Er-doped ZnO nanorod arrays for broadband antireflection
Authors: Cheng-Ying Chen 
Yen-Chun Chao
Chin-An Lin
Jian-Wei Lo
Hau He
Issue Date: Jan-2010
Publisher: IEEE
Start page/Pages: 1339-1340
Source: 2010 3rd International Nanoelectronics Conference (INEC)
Conference: Nanoelectronics Conference (INEC), 2010 3rd International
Abstract: 
We demonstrate a practical optoelectronic application of of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.
Description: 
Hong Kong, China
03-08 January 2010
URI: http://scholars.ntou.edu.tw/handle/123456789/23055
DOI: 10.1109/INEC.2010.5424868
Appears in Collections:光電與材料科技學系

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