|Title:||Investigation of Polishing Pads Impregnated with Fe and Al2O3 Particles for Single-Crystal Silicon Carbide Wafers||Authors:||Ho, Jihng-Kuo
|Keywords:||polishing pad;single-crystal silicon carbide;chemical mechanical polishing||Issue Date:||May-2016||Publisher:||MDPI||Journal Volume:||6||Journal Issue:||3||Source:||Applied Sciences||Abstract:||
This study focuses on the development of a novel polishing pad for SiC wafers. Fe and Al2O3 particles were impregnated in a polyurethane matrix, thus forming a fixed abrasive polishing pad. Four types of pads with different compositions of Fe and Al2O3 were fabricated. A combination of loose and fixed polishing methods was used for polishing with the fabricated pads and was investigated to improve the polishing process. The surface characteristics of the polished SiC wafer and the SiC removal rate during polishing using the designed pads were examined and compared with those for SiC polished with a conventional polyurethane pad. Experimental results showed that the removal rate for SiC in the case of polishing with the pads consisting 1 wt % Fe and 3 wt % Al2O3 particles was approximately 73% higher than that observed when polishing using the conventional polyurethane polishing pad. Additionally, the surface roughness of the resulting SiC wafers after polishing with the Fe and Al2O3-impregnated pads was identical to that when using the conventional polyurethane pad, without any surface damage. The results indicated that the Fe and Al2O3-impregnated pads can be effectively used for SiC wafer polishing. When the proposed process was employed for polishing single-crystal SiC, both the polishing time and cost were reduced. This novel design can facilitate the extensive use of single-crystal SiC wafers in the future.
|Appears in Collections:||機械與機電工程學系|
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