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請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/24573
標題: Optoelectronic Effects of Copper-Indium-Gallium-Sulfur (CIGS<sub>2</sub>)-Solar Cells Prepared by Three-Stage Co-Evaporation Process Technology
作者: Li, Tzu-Chien
Chang, Chia-Wen
Tai, Chia-Chun
Ho, Jyh-Jier 
Hsieh, Tung-Po
Liu, Yung-Tsung
Lu, Tsung-Lin
關鍵字: Cu-(In,Ga)-S-2 (CIGS(2)) solar cells;three-stage co-evaporation technique;[Cu]/([Ga] plus [In]) (CGI)-ratio stoichiometry;opto-electric sensing performance;eco-friendly community
公開日期: 1-九月-2023
出版社: MDPI
卷: 14
期: 9
來源出版物: MICROMACHINES
摘要: 
In this paper, the performance of Cu-(In,Ga)-S-2 (CIGS(2)) solar cells with adjusting composite [Cu]/([Ga] + [In]) (CGI)-ratio absorber was explored and compared through an improved three-stage co-evaporation technique. For co-evaporating CIGS(2) absorber as a less toxic alternative to Cd-containing film, we analyzed the effect of the CGI-ratio stoichiometry and crystallinity, and explored its opto-electric sensing characteristic of individual solar cell. The results of this research signified the potential of high-performance CIGS(2)-absorption solar cells for photovoltaic (PV)-module industrial applications. For the optimal CIGS(2)-absorption film (CGI = 0.95), the Raman main-phase signal (A1) falls at 291 cm(-1), which was excited by the 532 nm line of Ar+-laser. Using photo-luminescence (PL) spectroscopy, the corresponding main-peak bandgaps measured was 1.59 eV at the same CGI-ratio film. Meanwhile, the best conversion efficiency (eta = 3.212%) and the average external quantum efficiency (EQE = 51.1% in the visible-wavelength region) of photo-electric properties were achieved for the developed CIGS(2)-solar cells (CGI = 0.95). The discoveries of this CIGS(2)-absorption PV research provided a new scientific understanding of solar cells. Moreover, this research undeniably contributes to a major advancement towards practical PV-module applications and can help more to build an eco-friendly community.
URI: http://scholars.ntou.edu.tw/handle/123456789/24573
DOI: 10.3390/mi14091709
顯示於:電機工程學系

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