Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8144

Title:	Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure
Authors:	Lin, C. J. Huang, Y. S. Li, N. Y. Li, P. W. Kwong-Kau Tiong
Issue Date:	Nov-2001
Journal Volume:	90
Journal Issue:	9
Source:	Journal of Applied Physics
URI:	http://scholars.ntou.edu.tw/handle/123456789/8144
ISSN:	0021-8979
DOI:	10.1063/1.1405823 ://WOS:000171594800038
Appears in Collections:	電機工程學系

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