Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8737

Title:	Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate
Authors:	Chen, H. R. Hsu, M. K. Chiu, S. Y. T Chen, W. Chen, G. H. Chang, Y. C. Su, C. C. Wen-Shiung Lour
Issue Date:	Feb-2007
Journal Volume:	22
Journal Issue:	2
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8737
ISSN:	0268-1242
DOI:	10.1088/0268-1242/22/2/020 ://WOS:000243883200020
Appears in Collections:	電機工程學系

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