Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8743

Title:	Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
Authors:	Chen, T. P. Lee, C. J. Cheng, S. Y. Wen-Shiung Lour Tsai, J. H. Guo, D. F. Ku, G. W. Liu, W. C.
Issue Date:	2009
Journal Volume:	12
Journal Issue:	2
Source:	Electrochemical and Solid State Letters
URI:	http://scholars.ntou.edu.tw/handle/123456789/8743
ISSN:	1099-0062
DOI:	10.1149/1.3042272 ://WOS:000261698500017
Appears in Collections:	電機工程學系

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