Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8758

Title:	Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector
Authors:	Guo, D. F. Yen, C. H. Tsai, J. H. Wen-Shiung Lour Liu, W. C.
Issue Date:	2007
Journal Volume:	154
Journal Issue:	1
Source:	Journal of the Electrochemical Society
URI:	http://scholars.ntou.edu.tw/handle/123456789/8758
ISSN:	0013-4651
DOI:	10.1149/1.2374939 ://WOS:000242538600062
Appears in Collections:	電機工程學系

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