Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8872

Title:	Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing
Authors:	Lour, W. S. Tsai, M. K. Chen, K. C. Wu, Y. W. Shih-Wei Tan Yang, Y. J.
Issue Date:	Oct-2001
Journal Volume:	16
Journal Issue:	10
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8872
ISSN:	0268-1242
DOI:	10.1088/0268-1242/16/10/303 ://WOS:000171559600007
Appears in Collections:	電機工程學系

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