Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/8872

標題:	Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing
作者:	Lour, W. S. Tsai, M. K. Chen, K. C. Wu, Y. W. Shih-Wei Tan Yang, Y. J.
公開日期:	十月-2001
卷:	16
期:	10
來源出版物:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8872
ISSN:	0268-1242
DOI:	10.1088/0268-1242/16/10/303 ://WOS:000171559600007
顯示於：	電機工程學系

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