Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8876

Title:	Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation
Authors:	Shih-Wei Tan Chen, H. R. Chen, W. T. Hsu, M. K. Lin, A. H. Lour, W. S.
Issue Date:	Feb-2005
Journal Volume:	52
Journal Issue:	2
Source:	Ieee Transactions on Electron Devices
URI:	http://scholars.ntou.edu.tw/handle/123456789/8876
ISSN:	0018-9383
DOI:	10.1109/ted.2004.842537 ://WOS:000226481900011
Appears in Collections:	電機工程學系

Show full item record

Last Week
0

Last month
0

checked on Oct 13, 2022

Check

DSpace CRIS