Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8878

Title:	Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface
Authors:	Shih-Wei Tan Chen, H. R. Chu, M. Y. Chen, W. T. Lin, A. H. Hsu, M. K. Lin, T. S. Lour, W. S.
Issue Date:	Jun-2005
Journal Volume:	37
Journal Issue:	6
Source:	Superlattices and Microstructures
URI:	http://scholars.ntou.edu.tw/handle/123456789/8878
ISSN:	0749-6036
DOI:	10.1016/j.spmi.2005.02.002 ://WOS:000229512400006
Appears in Collections:	電機工程學系

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