Sub-0.5-mu m gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8883

Title:	Sub-0.5-mu m gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass
Authors:	Shih-Wei Tan Chen, W. T. Chu, M. Y. Lour, W. S.
Issue Date:	Feb-2004
Journal Volume:	19
Journal Issue:	2
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8883
ISSN:	0268-1242
DOI:	10.1088/0268-1242/19/2/007 ://WOS:000189377900007
Appears in Collections:	電機工程學系

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