Results 1-5 of 5 (Search time: 0.003 seconds).
| Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link | |
|---|---|---|---|---|---|---|
| 1 | 2010 | CMOS on dual SOI thickness for optimal performance | Lo, H. C.; Li, C. T.; Chen, Y. T.; Yang, C. T.; Luo, W. C.; Lu, W. Y.; Cheng-Fa Cheng ; Chen, T. L.; Lien, C. H.; Tsai, H. T.; Chen, M. C.; Fung, S. K. H.; Wu, C. C. | Microelectronic Engineering | ||
| 2 | 2010 | Optimization of Back Channel Leakage Characteristic in PD SOI p-MOSFET | Lo, H. C.; Chen, Y. T.; Li, C. T.; Luo, W. C.; Lu, W. Y.; Chen, M. C.; Cheng-Fa Cheng ; Chen, T. L.; Yang, C. T.; Lien, C. H.; Fung, S. K. H.; Wu, C. C. | Journal of the Electrochemical Society | ||
| 3 | 2009 | The Characteristics and Control of Body-to-Body Leakage Current in PD-SOI | Lo, H. C.; Luo, W. C.; Lu, W. Y.; Cheng-Fa Cheng ; Chen, T. L.; Lien, C. H.; Fung, S. K. H.; Wu, C. C. | Journal of the Electrochemical Society | ||
| 4 | 2005 | Bias-temperature instability on fully silicided-germanided gates/high-k Al2O3CMOSFETs | Liao, C. C.; Yu, D. S.; Cheng-Fa Cheng ; Chin, A. | Journal of the Electrochemical Society | ||
| 5 | 2004 | The copper contamination effect of Al2O3 gate dielectric on Si | Liao, C. C.; Cheng-Fa Cheng ; Yu, D. S.; Chin, A. | Journal of the Electrochemical Society |
