Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/10799

標題:	Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory
作者:	Lee, H. Y. Chen, Y. S. Chen, P. S. Chen-Han Tsai Gu, P. Y. Wu, T. Y. Tsai, K. H. Rahaman, S. Z. Chen, W. S. Chen, F. Tsai, M. J. Lee, M. H. Ku, T. K.
公開日期:	八月-2014
卷:	53
期:	8
來源出版物:	Japanese Journal of Applied Physics
URI:	http://scholars.ntou.edu.tw/handle/123456789/10799
ISSN:	0021-4922
DOI:	10.7567/jjap.53.08le01 ://WOS:000342523700017
顯示於：	海洋環境資訊系

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