Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/10799

Title:	Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory
Authors:	Lee, H. Y. Chen, Y. S. Chen, P. S. Chen-Han Tsai Gu, P. Y. Wu, T. Y. Tsai, K. H. Rahaman, S. Z. Chen, W. S. Chen, F. Tsai, M. J. Lee, M. H. Ku, T. K.
Issue Date:	Aug-2014
Journal Volume:	53
Journal Issue:	8
Source:	Japanese Journal of Applied Physics
URI:	http://scholars.ntou.edu.tw/handle/123456789/10799
ISSN:	0021-4922
DOI:	10.7567/jjap.53.08le01 ://WOS:000342523700017
Appears in Collections:	海洋環境資訊系

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