|Title:||Temperature dependence of sensing properties of hydrogen-sensitive extended-base heterojunction transistors||Authors:||Huang, Chia Hua
Tan, Shih Wei
Lour, Wen Shiung
|Keywords:||Hydrogen sensor;InGaP-GaAs;Bipolar transistor;Metal-semiconductor;Current gain||Issue Date:||29-Nov-2022||Publisher:||PERGAMON-ELSEVIER SCIENCE LTD||Journal Volume:||47||Journal Issue:||92||Start page/Pages:||39276-39287||Source:||INTERNATIONAL JOURNAL OF HYDROGEN ENERGY||Abstract:||
A planar-type metal-semiconductor-metal (MSM) hydrogen sensor forming on the collector layer was employed as an extended base (EB) of the InGaP-GaAs heterojunction bipolar transistors (HBTs). Then, hydrogen sensing transistors integrated were proposed and studied. After introducing sensing properties of the EB-hydrogen sensor, various sensing current gains defined were addressed for our hydrogen sensing transistor. Instead of the base current, N2 and/or hydrogen-containing gases were used as a parameter while measuring common-emitter characteristics of the hydrogen sensing transistor at various temperatures. Experimental results show that maximum sensing base current gains in 1% H2/N2 is 330 at 25 degrees C while it is enhanced to 1800 at 50 degrees C, then to 2300 at 80 degrees C, and finally to 2800 at 110 degrees C. In contrast, a peak sensing collector current gain is as high as 1.2 x 105 (4.3 x 104) in 1% (0.01%) at 110 degrees C. In addition, response times obtained from the sensing diode (base) and collector currents in 0.01% H2/N2 are 485 (490) and 745 s at 25 degrees C. Together with important features including one power supply and low-power consumption, the proposed hydrogen sensing transistor is very promising for applications in detecting hydrogen. (c) 2022 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
|Appears in Collections:||電機工程學系|
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