http://scholars.ntou.edu.tw/handle/123456789/4493
Title: | Annealing-induced changes in the nanoscale electrical homogeneity of bismuth ferrite dielectric thin films | Authors: | Chen, W. S. Chia-Yen Hu Chiem-Lum Huang Wu Kai Yuan-Chang Liang |
Keywords: | A. Films;B. Defects;B. Surfaces;C. Electrical properties;D. Perovskites | Issue Date: | Sep-2011 | Publisher: | Elsevier | Journal Volume: | 37 | Journal Issue: | 7 | Start page/Pages: | 2391-2396 | Source: | Ceramics International | Abstract: | In this study, we investigated the effects of forming gas (7% H2 + 93% Ar) annealing (FGA) and recovery annealing (RA) in ambient oxygen on the structure and electrical properties of BiFeO3 (BFO) thin films. X-ray diffraction results indicate that BFO remains in the perovskite phase following FGA. However, the spatial distribution of current maps obtained by conductive atomic force microscopy shows that FGA-treated BFO thin films are less electrically insulating than those without prepared thermal annealing. Recovery annealing improves the structural and chemical homogeneity of the FGA-treated films, thereby increasing the electrical resistance of the films. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/4493 | ISSN: | 0272-8842 | DOI: | 10.1016/j.ceramint.2011.03.029 |
Appears in Collections: | 光電與材料科技學系 |
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