A TEM investigation of retained defects in Si wafer by 1 MeV Si ions bombardment

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/4576

標題:	A TEM investigation of retained defects in Si wafer by 1 MeV Si ions bombardment
作者:	Hsu, J. Y. Rong-Tan Huang Hung, M. J. Yu, Y. C.
公開日期:	六月-2010
卷:	268
期:	11-12
來源出版物:	Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
URI:	http://scholars.ntou.edu.tw/handle/123456789/4576
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2010.02.086 ://WOS:000278702300111
顯示於：	光電與材料科技學系

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