Temperature effect study of silicon-on-insulator structures prepared by high dose implantation of nitrogen

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/4579

標題:	Temperature effect study of silicon-on-insulator structures prepared by high dose implantation of nitrogen
作者:	Rong-Tan Huang Hsu, J. Y. Huang, J. W. Yu, Y. C.
公開日期:	十二月-2011
卷:	269
期:	24
來源出版物:	Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
URI:	http://scholars.ntou.edu.tw/handle/123456789/4579
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2011.04.092 ://WOS:000298363500081
顯示於：	光電與材料科技學系

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