Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT

標題:	Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT
作者:	Chen, M. Y. Chung-Cheng Chang
關鍵字:	Heterojunction bipolar transistors (HBT);InGaP;metal–semiconductor–metal (MSM);photoreceiver;ZnSe
公開日期:	十一月-2008
出版社:	IEEE
卷:	29
期:	11
起(迄)頁:	1212 - 1214
來源出版物:	Ieee Electron Device Letters
摘要:	The monolithic integration of a ZnSe metal-semiconductor-metal photodiode and an InGaP/GaAs heterojunction bipolar transistor has been achieved successfully on a GaAs substrate. As a result of a current amplification ratio of 20.8, the present monolithic photoreceiver illuminated at an optical input-power intensity of 10 muW has shown high voltage amplification sensitivity of -29.6 mV/muW. The fabrication process and characterization for the integrated device will be useful for the development of wide-bandgap-based short-wavelength optoelectronic integrated circuits in the future.
URI:	http://scholars.ntou.edu.tw/handle/123456789/7583
ISSN:	0741-3106
DOI:	://WOS:000260866500011 ://WOS:000260866500011 ://WOS:000260866500011 ://WOS:000260866500011 10.1109/led.2008.2005430 ://WOS:000260866500011 ://WOS:000260866500011
顯示於：	電機工程學系

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