http://scholars.ntou.edu.tw/handle/123456789/7583| Title: | Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT | Authors: | Chen, M. Y. Chung-Cheng Chang |
Keywords: | Heterojunction bipolar transistors (HBT);InGaP;metal–semiconductor–metal (MSM);photoreceiver;ZnSe | Issue Date: | Nov-2008 | Publisher: | IEEE | Journal Volume: | 29 | Journal Issue: | 11 | Start page/Pages: | 1212 - 1214 | Source: | Ieee Electron Device Letters | Abstract: | The monolithic integration of a ZnSe metal-semiconductor-metal photodiode and an InGaP/GaAs heterojunction bipolar transistor has been achieved successfully on a GaAs substrate. As a result of a current amplification ratio of 20.8, the present monolithic photoreceiver illuminated at an optical input-power intensity of 10 muW has shown high voltage amplification sensitivity of -29.6 mV/muW. The fabrication process and characterization for the integrated device will be useful for the development of wide-bandgap-based short-wavelength optoelectronic integrated circuits in the future. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/7583 | ISSN: | 0741-3106 | DOI: | 10.1109/led.2008.2005430 |
| Appears in Collections: | 電機工程學系 |
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