Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8742

Title:	Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor
Authors:	Chen, T. P. Fu, S. I. Tsai, J. H. Wen-Shiung Lour Guo, D. F. Cheng, S. Y. Liu, W. C.
Issue Date:	Dec-2006
Journal Volume:	21
Journal Issue:	12
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8742
ISSN:	0268-1242
DOI:	10.1088/0268-1242/21/12/040 ://WOS:000242726300041
Appears in Collections:	電機工程學系

Show full item record

Last Week
0

Last month
0

checked on Oct 13, 2022

Check

DSpace CRIS