公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 |
2009 | GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles | Chiu, S. Y.; Hsiang-Wen Huang ; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, J. H.; Lour, W. S. | Electronics Letters | | |
2009 | GaN Sensors with Metal-Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration | Chiu, S. Y.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Huang, H. W.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | | |
2009 | High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2 | Chiu, S. Y.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Semiconductor Science and Technology | | |
2009 | High-performance InGaP/GaAs pnp delta-doped heterojunction bipolar transistor | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F. | Semiconductors | | |
2012 | High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode | Tsai, J. H.; Huang, C. H.; Wen-Shiung Lour ; Chao, Y. T.; Ou-Yang, J. J.; Jhou, J. C. | Thin Solid Films | | |
2008 | High-Sensitivity Metal-Semiconductor-Metal Hydrogen Sensors With a Mixture of Pd and SiO2 Forming Three-Dimensional Dipoles | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Ieee Electron Device Letters | | |
2009 | Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure | Chiu, S. Y.; Tsai, J. H.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, T. M.; Hsu, K. Y.; Wen-Shiung Lour | Sensors and Actuators B-Chemical | | |
2011 | Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer | Tsai, J. H.; Lai, S. W.; Lo, C.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | | |
2009 | InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure | Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Electronics Letters | | |
2010 | InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage | Tsai, J. H.; Wen-Shiung Lour ; Weng, T. Y.; Li, C. M. | Semiconductors | | |
2010 | InP/GaAsSb Type-II DHBTs with GaAsSb/lnGaAs Superlattice-Base and GaAsSb Bulk-Base Structures | Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C.; Wu, Y. Z.; Dai, Y. F. | Semiconductors | | |
2012 | An InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor with high current gain and low offset voltage | Tsai, J. H.; Wen-Shiung Lour ; Chao, Y. T.; Ye, S. S.; Ma, Y. C.; Jhou, J. C.; Wu, Y. R.; Ou-Yang, J. J. | Thin Solid Films | | |
2019 | Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers | Tsai, J. H.; Lin, P. S.; Wen-Shiung Lour ; Liu, W. C. | Ecs Journal of Solid State Science and Technology | | |
2007 | Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors | Guo, D. F.; Yen, C. H.; Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Journal of the Electrochemical Society | | |
2010 | Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor | Tsai, J. H.; Wen-Shiung Lour ; Huang, C. H.; Dale, N. F.; Lee, Y. H.; Sheng, J. S.; Liu, W. C. | Solid-State Electronics | | |
2008 | Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)(2)S treatment | Chiu, S. Y.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Liu, W. C.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | | |
2009 | Microwave complementary doped-channel field-effect transistors | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Liu, W. C.; Li, C. M.; Su, N. X.; Wu, Y. Z.; Huang, Y. S. | Superlattices and Microstructures | | |
2013 | MOS solar cells with oxides deposited by sol-gel spin-coating techniques | Huang, C. H.; Chung-Cheng Chang ; Tsai, J. H. | Semiconductors | | |
2011 | A New InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor (T-HEBT) | Tsai, J. H.; Lee, C. S.; Wen-Shiung Lour ; Ma, Y. C.; Ye, S. S. | Semiconductors | | |
2009 | On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) | Chen, T. P.; Lee, C. J.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, W. C. | Solid-State Electronics | | |