Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
2006 | Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C. | Semiconductor Science and Technology | 2 | |
2007 | Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector | Guo, D. F.; Yen, C. H.; Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Journal of the Electrochemical Society | | |
2011 | Comparative Investigation of InGaP/GaAs Pseudomorphic Field-Effect Transistors with Triple Doped-Channel Profiles | Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | | |
2012 | Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers | Tsai, J. H.; Ye, S. S.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | | |
2009 | Comprehensive investigation on planar type of Pd-GaN hydrogen sensors | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | International Journal of Hydrogen Energy | | |
2009 | Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Sensors and Actuators B-Chemical | | |
2009 | Cost analysis for deep excavation in Taipei City | Tsai, J. H.; Chern, S.; San-Shyan Lin | Kuwait Journal of Science & Engineering | | |
2009 | Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors | Chen, T. P.; Lee, C. J.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Ku, G. W.; Liu, W. C. | Electrochemical and Solid State Letters | | |
2008 | Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor | Chen, L. Y.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Tsai, T. H.; Chen, T. P.; Liu, Y. C.; Liu, W. C. | Semiconductor Science and Technology | | |
2009 | GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles | Chiu, S. Y.; Hsiang-Wen Huang ; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, J. H.; Lour, W. S. | Electronics Letters | | |
2009 | GaN Sensors with Metal-Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration | Chiu, S. Y.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Huang, H. W.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | | |
2009 | High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2 | Chiu, S. Y.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Semiconductor Science and Technology | | |
2009 | High-performance InGaP/GaAs pnp delta-doped heterojunction bipolar transistor | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F. | Semiconductors | | |
2012 | High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode | Tsai, J. H.; Huang, C. H.; Wen-Shiung Lour ; Chao, Y. T.; Ou-Yang, J. J.; Jhou, J. C. | Thin Solid Films | | |
2008 | High-Sensitivity Metal-Semiconductor-Metal Hydrogen Sensors With a Mixture of Pd and SiO2 Forming Three-Dimensional Dipoles | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Ieee Electron Device Letters | | |
2009 | Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure | Chiu, S. Y.; Tsai, J. H.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, T. M.; Hsu, K. Y.; Wen-Shiung Lour | Sensors and Actuators B-Chemical | | |
2011 | Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer | Tsai, J. H.; Lai, S. W.; Lo, C.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | | |
2009 | InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure | Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Electronics Letters | | |
2010 | InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage | Tsai, J. H.; Wen-Shiung Lour ; Weng, T. Y.; Li, C. M. | Semiconductors | | |
2010 | InP/GaAsSb Type-II DHBTs with GaAsSb/lnGaAs Superlattice-Base and GaAsSb Bulk-Base Structures | Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C.; Wu, Y. Z.; Dai, Y. F. | Semiconductors | | |