Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/10786

Title:	Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
Authors:	Chen, Y. S. Lee, H. Y. Chen, P. S. Chen, W. S. Tsai, K. H. Gu, P. Y. Wu, T. Y. Chen-Han Tsai Rahaman, S. Z. Lin, Y. D. Chen, F. Tsai, M. J. Ku, T. K.
Issue Date:	Feb-2014
Journal Volume:	35
Journal Issue:	2
Source:	Ieee Electron Device Letters
URI:	http://scholars.ntou.edu.tw/handle/123456789/10786
ISSN:	0741-3106
DOI:	10.1109/led.2013.2294375 ://WOS:000331377500018
Appears in Collections:	海洋環境資訊系

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