Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/10787

Title:	Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer
Authors:	Chen, Y. S. Lee, H. Y. Chen, P. S. Gu, P. Y. Liu, W. H. Chen, W. S. Hsu, Y. Y. Chen-Han Tsai Chen, F. Tsai, M. J. Lien, C. H.
Issue Date:	Mar-2011
Journal Volume:	32
Journal Issue:	3
Source:	Ieee Electron Device Letters
URI:	http://scholars.ntou.edu.tw/handle/123456789/10787
ISSN:	0741-3106
DOI:	10.1109/led.2010.2099201 ://WOS:000287658400056
Appears in Collections:	海洋環境資訊系

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