Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/10788

Title:	Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot
Authors:	Chen, Y. S. Lee, H. Y. Chen, P. S. Liu, W. H. Wang, S. M. Gu, P. Y. Hsu, Y. Y. Chen-Han Tsai Chen, W. S. Chen, F. Tsai, M. J. Lien, C.
Issue Date:	Nov-2011
Journal Volume:	32
Journal Issue:	11
Source:	Ieee Electron Device Letters
URI:	http://scholars.ntou.edu.tw/handle/123456789/10788
ISSN:	0741-3106
DOI:	10.1109/led.2011.2166051 ://WOS:000296239500039
Appears in Collections:	海洋環境資訊系

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