http://scholars.ntou.edu.tw/handle/123456789/20582
Title: | GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement | Authors: | Feng, David Jui-Yang Lin, Yen-Ju Ku, Yun-Cheng Jhang, Han-Yun Lin, Tzy-Rong Kuo, Mao-Kuen |
Issue Date: | 1-Apr-2017 | Publisher: | OPTICAL SOC AMER | Journal Volume: | 7 | Journal Issue: | 4 | Start page/Pages: | 1351-1364 | Source: | OPT MATER EXPRESS | Abstract: | We designed an InAs coupled quantum-dot (QD) structure with a GaAsSb spacer to form an intermediate band (IB). The electron and hole states are calculated using the k center dot p method. The numerical results revealed the band alignment changes to be quasi-type-II with 16% Sb. The 1 nm AlAs layers around the QD and 1 nm GaAs layer help in broadening the intraband absorption spectrum from the far infrared region to infrared range. The coupling QD structure with an 8.5 nm GaAsSb spacer and 16% Sb concentration exhibits better photoelectric efficiency for intermediate band solar cell in the simulation, with a 3.3% enhancement of the same PIN structure with GaAs as the intrinsic region. Introducing a GaAsSb layer in the coupling QD structure will also release the maximum shear stress in QD, exhibiting a 3% release with 16% a GaAsSb spacer. (C) 2017 Optical Society of America |
URI: | http://scholars.ntou.edu.tw/handle/123456789/20582 | ISSN: | 2159-3930 | DOI: | 10.1364/OME.7.001351 |
Appears in Collections: | 機械與機電工程學系 07 AFFORDABLE & CLEAN ENERGY |
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