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  1. National Taiwan Ocean University Research Hub
  2. 電機資訊學院
  3. 光電與材料科技學系
Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/25643
Title: Long room-temperature valley lifetimes of localized excitons in MoS<sub>2</sub> quantum dots
Authors: Wang, Hong-jyun
Chen, Yu-ting
Pan, Ting-yu
Yuan, Chi-tsu
Chou, Wu-ching
Chang, Sheng hsiung 
Lee, Yueh-chien
Shen, Ji-lin
Issue Date: 2024
Publisher: Optica Publishing Group
Journal Volume: 32
Journal Issue: 26
Start page/Pages: 47375-47384
Source: OPTICS EXPRESS
Abstract: 
Transition metal dichalcogenides (TMDs), which exhibit valley polarization characteristics, are very promising materials for the realization of valleytronic devices. To implement practical applications, a long valley lifetime at room temperature is necessary. Here, we demonstrate that diethylenetriamine (DETA)-functionalized MoS2 quantum dots (QDs) exhibit long valley lifetimes for localized excitons at room temperature. Based on polarization-resolved photoluminescence (PL) dynamics, the degree of circular polarization of defect-bound localized excitons in MoS2 QDs are found to be between 21% and-22%. The observed room-temperature valley lifetimes for excitons in MoS2 QDs are more than 58 ns, much larger than those in MoS2 monolayers (<= 4 ps). The decay of polarization-resolved PL and the dynamical degree of circular polarization can be modeled by using a rate equation approach. This model is based on intervalley scattering in dark exciton states and relaxation from dark exciton states to localized exciton states. Such a long-lived valley lifetime at room temperature could be significant for future valleytronics applications.
(c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
URI: http://scholars.ntou.edu.tw/handle/123456789/25643
ISSN: 1094-4087
DOI: 10.1364/OE.540784
Appears in Collections:光電與材料科技學系

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