http://scholars.ntou.edu.tw/handle/123456789/25643| 標題: | Long room-temperature valley lifetimes of localized excitons in MoS<sub>2</sub> quantum dots | 作者: | Wang, Hong-jyun Chen, Yu-ting Pan, Ting-yu Yuan, Chi-tsu Chou, Wu-ching Chang, Sheng hsiung Lee, Yueh-chien Shen, Ji-lin |
公開日期: | 2024 | 出版社: | Optica Publishing Group | 卷: | 32 | 期: | 26 | 起(迄)頁: | 47375-47384 | 來源出版物: | OPTICS EXPRESS | 摘要: | Transition metal dichalcogenides (TMDs), which exhibit valley polarization characteristics, are very promising materials for the realization of valleytronic devices. To implement practical applications, a long valley lifetime at room temperature is necessary. Here, we demonstrate that diethylenetriamine (DETA)-functionalized MoS2 quantum dots (QDs) exhibit long valley lifetimes for localized excitons at room temperature. Based on polarization-resolved photoluminescence (PL) dynamics, the degree of circular polarization of defect-bound localized excitons in MoS2 QDs are found to be between 21% and-22%. The observed room-temperature valley lifetimes for excitons in MoS2 QDs are more than 58 ns, much larger than those in MoS2 monolayers (<= 4 ps). The decay of polarization-resolved PL and the dynamical degree of circular polarization can be modeled by using a rate equation approach. This model is based on intervalley scattering in dark exciton states and relaxation from dark exciton states to localized exciton states. Such a long-lived valley lifetime at room temperature could be significant for future valleytronics applications. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement |
URI: | http://scholars.ntou.edu.tw/handle/123456789/25643 | ISSN: | 1094-4087 | DOI: | 10.1364/OE.540784 |
| 顯示於: | 光電與材料科技學系 |
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