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  1. National Taiwan Ocean University Research Hub
  2. 電機資訊學院
  3. 光電與材料科技學系
Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/25882
DC FieldValueLanguage
dc.contributor.authorChang, Wen-Hsinen_US
dc.contributor.authorHuang, Yi-Chunen_US
dc.contributor.authorChandel, Anjalien_US
dc.contributor.authorChiang, Shou-Enen_US
dc.contributor.authorWu, Jia-Renen_US
dc.contributor.authorChang, Sheng Hsiungen_US
dc.date.accessioned2025-06-07T06:59:21Z-
dc.date.available2025-06-07T06:59:21Z-
dc.date.issued2025-06-01-
dc.identifier.issn0577-9073-
dc.identifier.urihttp://scholars.ntou.edu.tw/handle/123456789/25882-
dc.description.abstractStable and photoactive un-doped alpha-phase formamidinium lead iodide (alpha-FAPbI3) thin film can be formed on top of the P3CT/ITO/glass sample via using a dimethylformamide:N-Methyl-2pyrrolidone:dimethyl sulfoxide (DMF:NMP:DMSO) mixture as the precursor solvent. The absorbance spectra, photoluminescence spectra, X-ray diffraction patterns, and Raman scattering spectra show that the molecular packing structure of the fullerene electron transport layer largely influences the photovoltaic performance of the resultant inverted-type FAPbI3 solar cells due to the formation of induced delta-phase FAPbI3 from the amorphous region. In the optimized FAPbI3 solar cells, the power conversion efficiency (PCE) largely increases from 7.64 % to 12.31 % after 15 days due to the formation of photoactive alpha-FAPbI3:delta-FAPbI3:PbI2 composite thin film. Our findings show that it is possible to increase the PCE of un-doped alpha-FAPbI3 solar cells via increasing the phase transition from amorphous FAPbI3 to alpha-FAPbI3.en_US
dc.language.isoEnglishen_US
dc.publisherELSEVIERen_US
dc.relation.ispartofCHINESE JOURNAL OF PHYSICSen_US
dc.subjectUn-doped alpha-FAPbI 3en_US
dc.subjectPassivation-induced phase transitionen_US
dc.subjectFullerene electron transport layeren_US
dc.subjectSolar cellsen_US
dc.titleImproved photovoltaic performance of un-doped FAPbI3 thin film based solar cells via de-trapping excitonsen_US
dc.typejournal articleen_US
dc.identifier.doi10.1016/j.cjph.2025.02.046-
dc.identifier.isiWOS:001483172200001-
dc.relation.journalvolume95en_US
dc.relation.pages790-802en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.cerifentitytypePublications-
item.languageiso639-1English-
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypejournal article-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptCollege of Engineering-
crisitem.author.orcid0000-0003-1488-1649-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
Appears in Collections:光電與材料科技學系
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