http://scholars.ntou.edu.tw/handle/123456789/25882| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Wen-Hsin | en_US |
| dc.contributor.author | Huang, Yi-Chun | en_US |
| dc.contributor.author | Chandel, Anjali | en_US |
| dc.contributor.author | Chiang, Shou-En | en_US |
| dc.contributor.author | Wu, Jia-Ren | en_US |
| dc.contributor.author | Chang, Sheng Hsiung | en_US |
| dc.date.accessioned | 2025-06-07T06:59:21Z | - |
| dc.date.available | 2025-06-07T06:59:21Z | - |
| dc.date.issued | 2025-06-01 | - |
| dc.identifier.issn | 0577-9073 | - |
| dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/25882 | - |
| dc.description.abstract | Stable and photoactive un-doped alpha-phase formamidinium lead iodide (alpha-FAPbI3) thin film can be formed on top of the P3CT/ITO/glass sample via using a dimethylformamide:N-Methyl-2pyrrolidone:dimethyl sulfoxide (DMF:NMP:DMSO) mixture as the precursor solvent. The absorbance spectra, photoluminescence spectra, X-ray diffraction patterns, and Raman scattering spectra show that the molecular packing structure of the fullerene electron transport layer largely influences the photovoltaic performance of the resultant inverted-type FAPbI3 solar cells due to the formation of induced delta-phase FAPbI3 from the amorphous region. In the optimized FAPbI3 solar cells, the power conversion efficiency (PCE) largely increases from 7.64 % to 12.31 % after 15 days due to the formation of photoactive alpha-FAPbI3:delta-FAPbI3:PbI2 composite thin film. Our findings show that it is possible to increase the PCE of un-doped alpha-FAPbI3 solar cells via increasing the phase transition from amorphous FAPbI3 to alpha-FAPbI3. | en_US |
| dc.language.iso | English | en_US |
| dc.publisher | ELSEVIER | en_US |
| dc.relation.ispartof | CHINESE JOURNAL OF PHYSICS | en_US |
| dc.subject | Un-doped alpha-FAPbI 3 | en_US |
| dc.subject | Passivation-induced phase transition | en_US |
| dc.subject | Fullerene electron transport layer | en_US |
| dc.subject | Solar cells | en_US |
| dc.title | Improved photovoltaic performance of un-doped FAPbI3 thin film based solar cells via de-trapping excitons | en_US |
| dc.type | journal article | en_US |
| dc.identifier.doi | 10.1016/j.cjph.2025.02.046 | - |
| dc.identifier.isi | WOS:001483172200001 | - |
| dc.relation.journalvolume | 95 | en_US |
| dc.relation.pages | 790-802 | en_US |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.cerifentitytype | Publications | - |
| item.languageiso639-1 | English | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| item.openairetype | journal article | - |
| crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
| crisitem.author.dept | Department of Optoelectronics and Materials Technology | - |
| crisitem.author.dept | College of Engineering | - |
| crisitem.author.orcid | 0000-0003-1488-1649 | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
| Appears in Collections: | 光電與材料科技學系 | |
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