http://scholars.ntou.edu.tw/handle/123456789/25882| 標題: | Improved photovoltaic performance of un-doped FAPbI3 thin film based solar cells via de-trapping excitons | 作者: | Chang, Wen-Hsin Huang, Yi-Chun Chandel, Anjali Chiang, Shou-En Wu, Jia-Ren Chang, Sheng Hsiung |
關鍵字: | Un-doped alpha-FAPbI 3;Passivation-induced phase transition;Fullerene electron transport layer;Solar cells | 公開日期: | 1-六月-2025 | 出版社: | ELSEVIER | 卷: | 95 | 起(迄)頁: | 790-802 | 來源出版物: | CHINESE JOURNAL OF PHYSICS | 摘要: | Stable and photoactive un-doped alpha-phase formamidinium lead iodide (alpha-FAPbI3) thin film can be formed on top of the P3CT/ITO/glass sample via using a dimethylformamide:N-Methyl-2pyrrolidone:dimethyl sulfoxide (DMF:NMP:DMSO) mixture as the precursor solvent. The absorbance spectra, photoluminescence spectra, X-ray diffraction patterns, and Raman scattering spectra show that the molecular packing structure of the fullerene electron transport layer largely influences the photovoltaic performance of the resultant inverted-type FAPbI3 solar cells due to the formation of induced delta-phase FAPbI3 from the amorphous region. In the optimized FAPbI3 solar cells, the power conversion efficiency (PCE) largely increases from 7.64 % to 12.31 % after 15 days due to the formation of photoactive alpha-FAPbI3:delta-FAPbI3:PbI2 composite thin film. Our findings show that it is possible to increase the PCE of un-doped alpha-FAPbI3 solar cells via increasing the phase transition from amorphous FAPbI3 to alpha-FAPbI3. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/25882 | ISSN: | 0577-9073 | DOI: | 10.1016/j.cjph.2025.02.046 |
| 顯示於: | 光電與材料科技學系 |
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