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  1. National Taiwan Ocean University Research Hub
  2. 電機資訊學院
  3. 光電與材料科技學系
Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/25882
Title: Improved photovoltaic performance of un-doped FAPbI3 thin film based solar cells via de-trapping excitons
Authors: Chang, Wen-Hsin
Huang, Yi-Chun
Chandel, Anjali
Chiang, Shou-En
Wu, Jia-Ren
Chang, Sheng Hsiung 
Keywords: Un-doped alpha-FAPbI 3;Passivation-induced phase transition;Fullerene electron transport layer;Solar cells
Issue Date: 1-Jun-2025
Publisher: ELSEVIER
Journal Volume: 95
Start page/Pages: 790-802
Source: CHINESE JOURNAL OF PHYSICS
Abstract: 
Stable and photoactive un-doped alpha-phase formamidinium lead iodide (alpha-FAPbI3) thin film can be formed on top of the P3CT/ITO/glass sample via using a dimethylformamide:N-Methyl-2pyrrolidone:dimethyl sulfoxide (DMF:NMP:DMSO) mixture as the precursor solvent. The absorbance spectra, photoluminescence spectra, X-ray diffraction patterns, and Raman scattering spectra show that the molecular packing structure of the fullerene electron transport layer largely influences the photovoltaic performance of the resultant inverted-type FAPbI3 solar cells due to the formation of induced delta-phase FAPbI3 from the amorphous region. In the optimized FAPbI3 solar cells, the power conversion efficiency (PCE) largely increases from 7.64 % to 12.31 % after 15 days due to the formation of photoactive alpha-FAPbI3:delta-FAPbI3:PbI2 composite thin film. Our findings show that it is possible to increase the PCE of un-doped alpha-FAPbI3 solar cells via increasing the phase transition from amorphous FAPbI3 to alpha-FAPbI3.
URI: http://scholars.ntou.edu.tw/handle/123456789/25882
ISSN: 0577-9073
DOI: 10.1016/j.cjph.2025.02.046
Appears in Collections:光電與材料科技學系

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