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Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/5515
Title: The copper contamination effect of Al2O3 gate dielectric on Si
Authors: Liao, C. C.
Cheng-Fa Cheng 
Yu, D. S.
Chin, A.
Issue Date: 2004
Journal Volume: 151
Journal Issue: 10
Source: Journal of the Electrochemical Society
URI: http://scholars.ntou.edu.tw/handle/123456789/5515
ISSN: 0013-4651
DOI: 10.1149/1.1789391
://WOS:000224678500073
Appears in Collections:通訊與導航工程學系

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