An integrated pyroelectric infrared sensor with a PZT thin film

Abstract

In this paper integrated pyroelectric infrared sensors have been made by combining a (Pb(Zr52Ti48)O3, PZT) thin film with an Si JFET. The JFET is used to read out the pyroelectrically generated signal. The relevant sensor parameters, voltage sensitivity and specific detectivity, are measured within a modulation frequency range from 0.2 to 10 Hz. With a 500 μm thick silicon substrate, the voltage sensitivity is Rv = 191 V W−1 and the maximum specific detectivity is D*=2 × 107 cm Hz1/2 W−1 at a modulation frequency of 1 Hz.