Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8770

Title:	Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer
Authors:	Wen-Shiung Lour Hsieh, J. L.
Issue Date:	Aug-1998
Journal Volume:	13
Journal Issue:	8
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8770
ISSN:	0268-1242
DOI:	10.1088/0268-1242/13/8/003 ://WOS:000075270800002
Appears in Collections:	電機工程學系

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