http://scholars.ntou.edu.tw/handle/123456789/22825
標題: | Double superstructures in InGaN/GaN nano-pyramid arrays | 作者: | Chiao-Yun Chang Heng Li Kuo-Bin Hong Ya-Yu Yang Wei-Chih Lai Tien-Chang Lu |
關鍵字: | LIGHT-EMITTING-DIODES;LASER-DIODES;GAN;MOVPE;PHOTOLUMINESCENCE;SUBSTRATE;SAPPHIRE;GROWTH | 公開日期: | 七月-2015 | 出版社: | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | 卷: | 86 | 起(迄)頁: | 275-279 | 來源出版物: | SUPERLATTICES AND MICROSTRUCTURES | 摘要: | We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/22825 | ISSN: | 0749-6036 | DOI: | 10.1016/j.spmi.2015.07.059 |
顯示於: | 電機工程學系 |
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