公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 |
2009 | Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors | Chen, T. P.; Lee, C. J.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Ku, G. W.; Liu, W. C. | Electrochemical and Solid State Letters | | |
2008 | Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor | Chen, L. Y.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Tsai, T. H.; Chen, T. P.; Liu, Y. C.; Liu, W. C. | Semiconductor Science and Technology | | |
1998 | Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer | Wen-Shiung Lour ; Hsieh, J. L. | Semiconductor Science and Technology | 31 | |
2007 | Emitter-induced gain effects on dual-emitter phototransistor as an electrooptical switch | Chen, W. T.; Chen, H. R.; Chiu, S. Y.; Hsu, M. K.; Liu, W. C.; Wen-Shiung Lour | Ieee Transactions on Electron Devices | | |
2006 | Extrinsic base surface-passivated dual-emitter heterojunction phototransistors | Chen, W. T.; Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; Wen-Shiung Lour | Superlattices and Microstructures | 2 | |
1999 | Field-effect-transistor and real-space-transfer behaviors by double-heterojunction doped channel | Lia, C. Y.; Wen-Shiung Lour ; Hsieh, J. L. | Thin Solid Films | 0 | |
2009 | GaN Sensors with Metal-Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration | Chiu, S. Y.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Huang, H. W.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | | |
2006 | Gate-metal formation-related kink effect and gate current on In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor performance | Hsu, M. K.; Chen, H. R.; Chiou, S. Y.; Chen, W. T.; Chen, G. H.; Chang, Y. C.; Wen-Shiung Lour | Applied Physics Letters | 14 | |
2022 | Heterojunction bipolar transistors with a planar-type extended base as a hydrogen-sensitive sensor | Huang, Chia-Hua; Tan, Shih-Wei ; Lo, Hao; Lo, Chieh; Lour, Wen-Shiung | ELECTRON LETT | 0 | |
2009 | High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2 | Chiu, S. Y.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Semiconductor Science and Technology | | |
2021 | High-Performance AlGaN/GaN Enhancement-Mode High Electron Mobility Transistor by Two-Step Gate Recess and Electroless-Plating Approaches | Chang, Ching-Hong; Lin, Yue-Chang; Niu, Jing-Shiuan; Lour, Wen-Shiung ; Tsai, Jung-Hui; Liu, Wen-Chau | SCIENCE OF ADVANCED MATERIALS | 3 | |
2009 | High-performance InGaP/GaAs pnp delta-doped heterojunction bipolar transistor | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F. | Semiconductors | | |
2012 | High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode | Tsai, J. H.; Huang, C. H.; Wen-Shiung Lour ; Chao, Y. T.; Ou-Yang, J. J.; Jhou, J. C. | Thin Solid Films | | |
2008 | High-Sensitivity Metal-Semiconductor-Metal Hydrogen Sensors With a Mixture of Pd and SiO2 Forming Three-Dimensional Dipoles | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Ieee Electron Device Letters | | |
2009 | Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure | Chiu, S. Y.; Tsai, J. H.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, T. M.; Hsu, K. Y.; Wen-Shiung Lour | Sensors and Actuators B-Chemical | | |
2011 | Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer | Tsai, J. H.; Lai, S. W.; Lo, C.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | | |
1999 | Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors | Chang, W. L.; Pan, H. J.; Wang, W. C.; Thei, K. B.; Wen-Shiung Lour ; Liu, W. C. | Semiconductor Science and Technology | 1 | |
2009 | InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure | Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Electronics Letters | | |
2010 | InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage | Tsai, J. H.; Wen-Shiung Lour ; Weng, T. Y.; Li, C. M. | Semiconductors | | |
2010 | InP/GaAsSb Type-II DHBTs with GaAsSb/lnGaAs Superlattice-Base and GaAsSb Bulk-Base Structures | Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C.; Wu, Y. Z.; Dai, Y. F. | Semiconductors | | |