Results 1-60 of 60 (Search time: 0.001 seconds).
| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link | |
|---|---|---|---|---|---|---|---|
| 1 | 2003 | An investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors | Chen, W. T.; Chu, M. Y.; Tsai, M. K.; Yang, Y. J.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | |||
| 2 | 2006 | Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C. | Semiconductor Science and Technology | 2 | ||
| 3 | 2011 | Cell-Temperature Determination in InGaP-(In)GaAs-Ge Triple-Junction Solar Cells | Yang, W. C.; Lo, C.; Wei, C. Y.; Wen-Shiung Lour | Ieee Electron Device Letters | |||
| 4 | 2007 | Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector | Guo, D. F.; Yen, C. H.; Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Journal of the Electrochemical Society | |||
| 5 | 2007 | Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate | Hsu, M. K.; Chen, H. R.; Chiu, S. Y.; Chen, W. T.; Liu, W. C.; Tasi, J. H.; Wen-Shiung Lour | Semiconductor Science and Technology | |||
| 6 | 2011 | Comparative Investigation of InGaP/GaAs Pseudomorphic Field-Effect Transistors with Triple Doped-Channel Profiles | Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | |||
| 7 | 2012 | Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers | Tsai, J. H.; Ye, S. S.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | |||
| 8 | 2006 | Comparison of tuning performance characteristics of dual-emitter phototransistor with biased emitter and heterojunction phototransistor with biased base | Chen, W. T.; Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; Wen-Shiung Lour | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | 0 | ||
| 9 | 1998 | Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors | Wen-Shiung Lour ; Lia, C. Y. | Semiconductor Science and Technology | 22 | ||
| 10 | 2009 | Comprehensive investigation on planar type of Pd-GaN hydrogen sensors | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | International Journal of Hydrogen Energy | |||
| 11 | 2020 | Comprehensive Studies of High-Linearity Position-Sensitivity Detectors With Theoretical Consideration on Lateral Photovoltaic Currents | Chia-Hua Huang; Hao Lo; Chieh Lo; Wen-Shiung Lour | IEEE J ELECTRON DEVI | 3 | ||
| 12 | 2020 | Comprehensive Studies of High-Linearity Position-Sensitivity Detectors With Theoretical Consideration on Lateral Photovoltaic Currents (vol 8, pg 92, 2020) | Huang, Chia-Hua; Lo, Hao; Lo, Chieh; Lour, Wen-Shiung | IEEE J ELECTRON DEVI | 0 | ||
| 13 | 2009 | Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Sensors and Actuators B-Chemical | |||
| 14 | 1999 | Direct current and alternating current performance in InGaP/InxGa1-xAs FETs using airbridge gate with multiple piers | Chen, H. R.; Wu, M. Y.; Wen-Shiung Lour ; Hung, G. L.; Shih, Y. M. | Semiconductor Science and Technology | 7 | ||
| 15 | 2007 | Dynamic performance of dual-emitter phototransistor as electro-optical switch | Chiu, S. Y.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Liu, W. C.; Wen-Shiung Lour | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | |||
| 16 | 2009 | Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors | Chen, T. P.; Lee, C. J.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Ku, G. W.; Liu, W. C. | Electrochemical and Solid State Letters | |||
| 17 | 2008 | Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor | Chen, L. Y.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Tsai, T. H.; Chen, T. P.; Liu, Y. C.; Liu, W. C. | Semiconductor Science and Technology | |||
| 18 | 1998 | Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer | Wen-Shiung Lour ; Hsieh, J. L. | Semiconductor Science and Technology | 31 | ||
| 19 | 2007 | Emitter-induced gain effects on dual-emitter phototransistor as an electrooptical switch | Chen, W. T.; Chen, H. R.; Chiu, S. Y.; Hsu, M. K.; Liu, W. C.; Wen-Shiung Lour | Ieee Transactions on Electron Devices | |||
| 20 | 2006 | Extrinsic base surface-passivated dual-emitter heterojunction phototransistors | Chen, W. T.; Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; Wen-Shiung Lour | Superlattices and Microstructures | 2 | ||
| 21 | 1999 | Field-effect-transistor and real-space-transfer behaviors by double-heterojunction doped channel | Lia, C. Y.; Wen-Shiung Lour ; Hsieh, J. L. | Thin Solid Films | 0 | ||
| 22 | 2009 | GaN Sensors with Metal-Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration | Chiu, S. Y.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Huang, H. W.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | |||
| 23 | 2006 | Gate-metal formation-related kink effect and gate current on In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor performance | Hsu, M. K.; Chen, H. R.; Chiou, S. Y.; Chen, W. T.; Chen, G. H.; Chang, Y. C.; Wen-Shiung Lour | Applied Physics Letters | 14 | ||
| 24 | 2022 | Heterojunction bipolar transistors with a planar-type extended base as a hydrogen-sensitive sensor | Huang, Chia-Hua; Tan, Shih-Wei ; Lo, Hao; Lo, Chieh; Lour, Wen-Shiung | ELECTRON LETT | 0 | ||
| 25 | 2009 | High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2 | Chiu, S. Y.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Semiconductor Science and Technology | |||
| 26 | 2021 | High-Performance AlGaN/GaN Enhancement-Mode High Electron Mobility Transistor by Two-Step Gate Recess and Electroless-Plating Approaches | Chang, Ching-Hong; Lin, Yue-Chang; Niu, Jing-Shiuan; Lour, Wen-Shiung ; Tsai, Jung-Hui; Liu, Wen-Chau | SCIENCE OF ADVANCED MATERIALS | 3 | ||
| 27 | 2009 | High-performance InGaP/GaAs pnp delta-doped heterojunction bipolar transistor | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F. | Semiconductors | |||
| 28 | 2012 | High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode | Tsai, J. H.; Huang, C. H.; Wen-Shiung Lour ; Chao, Y. T.; Ou-Yang, J. J.; Jhou, J. C. | Thin Solid Films | |||
| 29 | 2008 | High-Sensitivity Metal-Semiconductor-Metal Hydrogen Sensors With a Mixture of Pd and SiO2 Forming Three-Dimensional Dipoles | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Ieee Electron Device Letters | |||
| 30 | 2009 | Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure | Chiu, S. Y.; Tsai, J. H.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, T. M.; Hsu, K. Y.; Wen-Shiung Lour | Sensors and Actuators B-Chemical | |||
| 31 | 2011 | Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer | Tsai, J. H.; Lai, S. W.; Lo, C.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | |||
| 32 | 1999 | Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors | Chang, W. L.; Pan, H. J.; Wang, W. C.; Thei, K. B.; Wen-Shiung Lour ; Liu, W. C. | Semiconductor Science and Technology | 1 | ||
| 33 | 2009 | InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure | Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Electronics Letters | |||
| 34 | 2010 | InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage | Tsai, J. H.; Wen-Shiung Lour ; Weng, T. Y.; Li, C. M. | Semiconductors | |||
| 35 | 2010 | InP/GaAsSb Type-II DHBTs with GaAsSb/lnGaAs Superlattice-Base and GaAsSb Bulk-Base Structures | Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C.; Wu, Y. Z.; Dai, Y. F. | Semiconductors | |||
| 36 | 2012 | An InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor with high current gain and low offset voltage | Tsai, J. H.; Wen-Shiung Lour ; Chao, Y. T.; Ye, S. S.; Ma, Y. C.; Jhou, J. C.; Wu, Y. R.; Ou-Yang, J. J. | Thin Solid Films | |||
| 37 | 2019 | Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers | Tsai, J. H.; Lin, P. S.; Wen-Shiung Lour ; Liu, W. C. | Ecs Journal of Solid State Science and Technology | |||
| 38 | 2007 | Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors | Guo, D. F.; Yen, C. H.; Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Journal of the Electrochemical Society | |||
| 39 | 2010 | Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor | Tsai, J. H.; Wen-Shiung Lour ; Huang, C. H.; Dale, N. F.; Lee, Y. H.; Sheng, J. S.; Liu, W. C. | Solid-State Electronics | |||
| 40 | 2008 | Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)(2)S treatment | Chiu, S. Y.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Liu, W. C.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | |||
| 41 | 1997 | Low-distortion AlGaAs/InGaAs power HFETs with quantum-doped graded-like channels | Wen-Shiung Lour ; Chen, H. R.; Hung, L. T. | Semiconductor Science and Technology | 7 | ||
| 42 | 2009 | Microwave complementary doped-channel field-effect transistors | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Liu, W. C.; Li, C. M.; Su, N. X.; Wu, Y. Z.; Huang, Y. S. | Superlattices and Microstructures | |||
| 43 | 2024/10/29 | Monolithic Integration of GaAs-Based Darlington Cascode With Multifinger and Nonuniform Spacing Emitter | Wu, Dian-Ying; Chiu, Yu-Hsiang; Liu, Yu-Chen; Wu, Cheng-Yeu; Lour, Wen-Shiung ; Wu, Meng-Chyi | IEEE TRANSACTIONS ON ELECTRON DEVICES | |||
| 44 | 2000 | A New Air-Bridge Gate Ga0.51In0.49P/In0.15Ga0.85As Pseudomorphic Transistor | Chang, W. L.; Liu, W. C.; Wen-Shiung Lour ; Wang, W. C.; Pan, H. J.; Thei, K. B. | Japanese Journal of Applied Physics | 0 | ||
| 45 | 2011 | A New InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor (T-HEBT) | Tsai, J. H.; Lee, C. S.; Wen-Shiung Lour ; Ma, Y. C.; Ye, S. S. | Semiconductors | |||
| 46 | 2019 | Nondestructive Evaluation of Multijunction Solar Cells for Matching Currents | Huang, Chia-Hua; Lo, Hao; Lo, Chieh; Hsu, Chia-Chieh; Lour, Wen-Shiung | IEEE J ELECTRON DEVI | 1 | ||
| 47 | 2009 | On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) | Chen, T. P.; Lee, C. J.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, W. C. | Solid-State Electronics | |||
| 48 | 2007 | Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate | Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; T Chen, W.; Chen, G. H.; Chang, Y. C.; Su, C. C.; Wen-Shiung Lour | Semiconductor Science and Technology | |||
| 49 | 2016 | Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell | Huang, Tzu-Hsuan; Lo, Hao; Lo, Chieh; Wu, Meng-Chyi; Lour, Wen-Shiung | SOLID STATE ELECTRON | 3 | ||
| 50 | 2016 | Photovoltaic Performance of Ge-Subcell Evaluated Directly in Ge-Based Triple-Junction Solar Cells | Huang, T. H.; Lo, H.; Lo, C.; Wu, M. C.; W. S. Lour | ECS J SOLID STATE SC | 1 | ||
| 51 | 2007 | Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment | Chen, W. T.; Chen, H. R.; Chiu, S. Y.; Hsu, M. K.; Tsai, J. H.; Wen-Shiung Lour | Journal of the Electrochemical Society | |||
| 52 | 2013 | Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture | Lo, C.; Wei, C. Y.; Tsai, J. H.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | |||
| 53 | 2016 | Static and dynamic properties of a GaAs p-i-n position-sensitive detector (PSD) | Huang, Tzu-Hsuan; Lo, Hao; Lo, Chieh; Wu, Meng-Chyi; W.S. Lour | SENSOR ACTUAT A-PHYS | 6 | ||
| 54 | 2007 | Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors | Chen, T. P.; Fu, S. I.; Liu, W. C.; Cheng, S. Y.; Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Journal of Applied Physics | |||
| 55 | 2006 | Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT) | Chen, C. W.; Lai, P. H.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, A. C. | Semiconductor Science and Technology | |||
| 56 | 2007 | Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure | Chen, T. P.; Fu, S. I.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Liu, W. C. | Electrochemical and Solid State Letters | |||
| 57 | 2006 | Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor | Chen, T. P.; Fu, S. I.; Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Cheng, S. Y.; Liu, W. C. | Semiconductor Science and Technology | |||
| 58 | 2005 | The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Wen-Shiung Lour ; Shih-Wei Tan | Journal of Applied Physics | |||
| 59 | 2005 | Three-terminal dual-emitter phototransistor with both voltageand power-tunable optical gains | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | |||
| 60 | 2012 | Unidirectional sensing characteristics of structured Au-GaN-Pt diodes for differential-pair hydrogen sensors | Lo, C.; Wei, C. Y.; Tsai, J. H.; Hsu, K. Y.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy |
